symbol 10 sec steady state v ds v gs -12 -10 -9 -8 i dm i ar e ar 3.1 1.7 2.0 1.1 t j , t stg parameter symbol typ max t 10s 31 40 steady state 59 75 steady state r q jl 16 24 repetitive avalanche energy l=0.3mh g mj -120 a -28 118 pulsed drain current b avalanche current g continuous drain current a power dissipation a t a =25c junction and storage temperature range t a =70c units parameter t a =25c t a =70c v v i d gate-source voltage drain-source voltage -40 absolute maximum ratings t j =25c unless otherwise noted p d maximum junction-to-lead c c/w thermal characteristics units maximum junction-to-ambient a c/w maximum junction-to-ambient a w 20 c/w r q ja c -55 to 150 AO4485 v ds (v) = -40v i d = -10a (v gs = -10v) r ds(on) < 15m (v gs = -10v) r ds(on) < 20m (v gs = -4.5v) the AO4485 uses advanced trench technology to provide excellent r ds(on) with low gate charge. this device is suitable for use as a dc-dc converter application. soic-8 g d s www.freescale.net.cn 1/4 40v p-channel mosfet general description features
symbol min typ max units bv dss -40 v -1 t j = 55c -5 i gss 100 na v gs(th) -1.7 -1.9 -2.5 v i d(on) -120 a 12.5 15 t j =125c 19 23 16 20 g fs 25 s v sd -0.7 -1 v i s -3 a c iss 2500 3000 pf c oss 260 pf c rss 180 pf r g 2.5 4 6 w q g (10v) 42 55 nc q g (4.5v) 18.6 nc q gs 7 nc q gd 8.6 nc t d(on) 9.4 ns t r 20 ns t d(off) 55 ns t f 30 ns t rr 38 49 ns q rr 47 nc 0 on state drain current i d = -250 m a, v gs = 0v v gs = -10v, v ds = -5v v ds = -40v, v gs = 0v v ds = 0v, v gs = 20v zero gate voltage drain current gate-body leakage current body diode reverse recovery time body diode reverse recovery charge i f =-10a, di/dt=100a/ m s v gs = -10v, i d = -10a reverse transfer capacitance i f =-10a, di/dt=100a/ m s static drain-source on-resistance diode forward voltage v gs = -4.5v, i d = -8a m w gate threshold voltage v ds = v gs i d = -250 m a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss r ds(on) drain-source breakdown voltage turn-off delaytime v gs =-10v, v ds =-20v, r l = 2 w , r gen =3 w turn-off fall time turn-on delaytime turn-on rise time gate source charge gate drain charge m a total gate charge v gs =-10v, v ds =-20v, i d =-10a output capacitance i s = -1a,v gs = 0v v ds = -5v, i d = -10a forward transconductance gate resistance switching parameters dynamic parameters maximum body-diode continuous current total gate charge v gs =0v, v ds =0v, f=1mhz v gs =0v, v ds =-20v, f=1mhz input capacitance a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a = 25c. the value in any given application depends on the user 's specific board design. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using t 300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s thermal resistance rating. g. e ar and i ar ratings are based on low frequency and duty cycles to keep t j =25c. rev1: nov. 2010 www.freescale.net.cn 2/4 AO4485 40v p-channel mosfet
typical electrical and thermal characteristics i f =-6.5a, di/dt=100a/ m s this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 20 40 60 80 100 120 0 1 2 3 4 5 -v ds (volts) figure 1: on-region characteristics i d (a) -4v -4.5v -10v -3.5v 0 20 40 60 80 100 1.5 2 2.5 3 3.5 4 4.5 5 -v gs (volts) figure 2: transfer characteristics i d (a) 25c 125c v ds = -5v 10 12 14 16 18 20 0 4 8 12 16 20 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) v gs = -10v v gs = -4.5v 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1.0 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance 10 15 20 25 30 35 2 4 6 8 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) i d = -10a 25c 125c v gs = -3v v gs = -10v i d = -10a v gs = -4.5v i d = -7.5a www.freescale.net.cn 3/4 AO4485 40v p-channel mosfet
typical electrical and thermal characteristics i f =-6.5a, di/dt=100a/ m s this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 500 1000 1500 2000 2500 3000 3500 4000 0 10 20 30 40 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 1 10 100 1000 0.0001 0.01 1 100 pulse width (s) figure 10: single pulse power rating junction- to-ambient (note e) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance(note e) z q q q q ja normalized transient thermal resistance 0.01 0.1 1 10 100 1000 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) r ds(on) limited t j(max) =150c t a =25c 100 m s 10ms 1ms 100ms 10s 10 m s dc v ds = 15v i d = -10a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =75c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c www.freescale.net.cn www.freescale.net.cn 4/4 AO4485 40v p-channel mosfet
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